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Researchers at Dainippon Screen and Gifu University developed a technology that analyzes amorphous silicon film that is used for thin film silicon solar cells. The technology will be incorporated with a spectroscopic ellipsometric film thickness measurement device.

ミネソタ大学の研究者は、３０％以上の効率を達成できる太陽電池を形成するための壁となっている重大障害を乗り越えた。現在のシリコンを基にした太陽電池では、電子が過剰太陽エネルギーを吸収して、電力として取り込まれる前に、熱として放出される。研究者は、銅セレナイドで作られた「量子ドット」は熱としてのエネルギー損出を少なくするため効率を高めることが出来ることを照明した。

NICT verified an operation technology of optical packet/optical path total networks for the next generation network. The technology allows handling of the optical packet exchange and the optical path exchange under a unified control. In the future, users freely select high speed and inexpensive and high quality services depending on the users’ needs. Also since the network can be operated efficiently, the power consumption of the network as a whole will be reduced.

Researchers at Tokyo University determined the mechanism that is responsible to form microstructures of woods. This finding leads to improvements in quality and production of woods.

Researchers from Tokyo University and JST developed a germanium transistor with the world highest mobility. It has been known that the carrier mobility in germanium is much better than that of silicon, but the creation of a stable gate insulating film was difficult. The researchers solved this problem by designing the gate film from a new point of view in material. The result leads a development of low voltage and high performance transistor.

Polyimide film is widely used for electrical and electronic parts as a temperature resistant film, but it is expensive and hard to use for molding. Unitika developed a comparable film using a thermoplastic aromatic compound polyamide resin by employing a 2 axis extension film formation technique.

レンセラー工科大学の研究者は、一億分の一の厚さの金フイルムを形成する非常に簡単は方法を開発した。かれらは、ナノ金粒子を含むトルエンの小さな液滴を固体表面に形成する、粒子はトルエンと空気の境目に集まり、トルエンが蒸発すると薄いフィルムとなることを発見した。シリコンを含めた色々な固体上で形成することが可能で、ナノ電子デバイスへの応用が期待できる。

Fujitsu developed a spin insertion MRAM expected to be a next generation nonvolatile memory. The spin insertion MRAM is expected to replace NOR flash memory used for cell phones and PDA. They succeeded to reduce the size by 60% by reversing the order of magnetic body of the MTJ element.

Researchers from Tokyo University and JST succeeded to directly observe s new spin structure, Skyrmion crystal. Since the spin of the Skyrmion crystal has a spiral structure, a strong interaction between electron and magnetic field. A large unusual Hall effect is predicted. The researchers selected FeO₅CoO₅Si with the spiral spin structure and directly observed Skyrmion using a Lorenz electron microscope.

Researchers at Tokyo University developed a low cost SRAM technology that allows integrated circuits to be operated at 0.5V. The power consumption of the integrated circuit operated at 0.5V is one tenth of that of conventional circuits, so the technology can be used for a low power consumption PC and mobile devices.